ترانزیستور ماسفت N-Channel HEXFET Power MOSFET SMD ; NPN,20V,4.2A,1.25W
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 20 V
Id – Continuous Drain Current: 4.2 A
Rds On – Drain-Source Resistance: 45 mOhms
Vgs – Gate-Source Voltage: – 12 V, + 12 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 1.25 W
Channel Mode: Enhancement
Configuration: Single
Height: 1.1 mm
Length: 2.9 mm
Transistor Type: 1 N-Channel
Width: 1.3 mm
Brand: Infineon / IR
Fall Time: 26 ns
Product Type: MOSFET
Rise Time: 10 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 54 ns
Typical Turn-On Delay Time: 7.5 ns
Unit Weight: 1.438 g
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