N-Mosfet/1 Channel/900V/11A/1.4 Ohms
Manufacturer:ON Semiconductor
Product Category:MOSFET
RoHS:Details
Technology:Si
Mounting Style:Through Hole
Package / Case:TO-3PN-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds – Drain-Source Breakdown Voltage:900 V
Id – Continuous Drain Current:11 A
Rds On – Drain-Source Resistance:1.4 Ohms
Vgs – Gate-Source Voltage:30 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd – Power Dissipation:300 W
Configuration:Single
Channel Mode:Enhancement
Tradename:QFET
Packaging:Tube
Height:20.1 mm
Length:16.2 mm
Series:FQA11N90C_F109
Transistor Type:1 N-Channel
Width:5 mm
Brand:ON Semiconductor / Fairchild
Fall Time:85 ns
Product Type:MOSFET
Rise Time:130 ns
Factory Pack Quantity:450
Subcategory:MOSFETs
Typical Turn-Off Delay Time:130 ns
Typical Turn-On Delay Time:60 ns
Unit Weight:6.401 g
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