ترانزیستور ماسفتP80NF10,80N10 N-CHANNEL 100V,80A,300W,0.012 OHM
Manufacturer:STMicroelectronicsProduct Category:MOSFETRoHS:DetailsTechnology:SiMounting Style:Through HolePackage / Case:TO-220-3Number of Channels:1 ChannelTransistor Polarity:N-ChannelVds – Drain-Source Breakdown Voltage:100 VId – Continuous Drain Current:80 ARds On – Drain-Source Resistance:15 mOhmsVgs th – Gate-Source Threshold Voltage:2 VVgs – Gate-Source Voltage:10 VQg – Gate Charge:135 nCMinimum Operating Temperature:- 55 CMaximum Operating Temperature:+ 175 CConfiguration:SinglePd – Power Dissipation:300 WChannel Mode:EnhancementHeight:9.15 mmLength:10.4 mmSeries:STB80NF10Transistor Type:1 N-Channel Power MOSFETType:MOSFETWidth:4.6 mmBrand:STMicroelectronicsForward Transconductance – Min:50 SFall Time:60 nsProduct Type:MOSFETRise Time:80 nsFactory Pack Quantity:50Typical Turn-Off Delay Time:116 nsTypical Turn-On Delay Time:26 ns
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