IGBT,1300V,63A(33A),180W,102nS
-Manufacturer:STMicroelectronics-Product Category:IGBT Transistors-RoHS:Details-Technology:Si-Package / Case:TO-247-Mounting Style:Through Hole-Configuration:Single-Collector- Emitter Voltage VCEO Max:1300 V-Collector-Emitter Saturation Voltage:2.1 v-Maximum Gate Emitter Voltage:25 V-Continuous Collector Current at 25 C:55 A-Pd – Power Dissipation:180 W-Minimum Operating Temperature:- 55 C-Maximum Operating Temperature:+ 150 C-Series:STGW38IH130D-Packaging:Tube-Height:20.15 mm-Length:15.75 mm-Width:5.15 mm-Brand:STMicroelectronics-Continuous Collector Current:55 A-Gate-Emitter Leakage Current:+/- 100 nA-Product Type:IGBT Transistors-Factory Pack Quantity:30-Subcategory:IGBTs-Unit Weight:6g
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